AS4C128M8D1-6TIN - IC DRAM 1G PARALLEL 66TSOP II

制造商零件编号

AS4C128M8D1-6TIN

内部零件号

ABC-AS4C128M8D1-6TIN

制造商

Alliance Memory, Inc.

简要描述

IC DRAM 1G PARALLEL 66TSOP II

RoHS状态

无铅/符合RoHS

交货时间

1-2天

可用数量

74176 Pieces

参考价

~~USD 22.42~~

我们的价格

-（请以更优惠的价格与我们联系：[email protected]）

ABC Semiconductor有AS4C128M8D1-6TIN的库存可出售。我们可以在1-2天内寄给您。请联系我们以获得AS4C128M8D1-6TIN的更优惠价格。我们的电子邮件：[email protected]

运送方式和运送时间:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

付款方式:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

规格 AS4C128M8D1-6TIN

质量保证 : 365天保修

库存资源 : 特许经销商/制造商直销

出生国家 : USA / TAIWAN / MEXICO / MALAYSIA / PHI

零件号 : AS4C128M8D1-6TIN

制造商 : Alliance Memory, Inc.

描述 : IC DRAM 1G PARALLEL 66TSOP II

系列 : -

零件状态 : Active

内存类型 : Volatile

存储格式 : DRAM

技术 : SDRAM - DDR

内存大小 : 1Gb (128M x 8)

时钟频率 : 166MHz

写周期时间 - 字，页面 : 15ns

访问时间 : 700ps

内存接口 : Parallel

电压 - 电源 : 2.3V ~ 2.7V

工作温度 : -40°C ~ 85°C (TA)

安装类型 : Surface Mount

封装/箱体 : 66-TSSOP (0.400", 10.16mm Width)

供应商设备封装 : 66-TSOP II

重量 : -

条件 : 新的和原始的

文件 AS4C128M8D1-6TIN

数据表 : AS4C128M8D1-6TIN.pdf

相关产品 AS4C128M8D1-6TIN Alliance Memory, Inc.

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