IS43R86400D-6BLI - IC DRAM 512M PARALLEL 60TFBGA
制造商零件编号
内部零件号
ABC-IS43R86400D-6BLI
简要描述
IC DRAM 512M PARALLEL 60TFBGA
RoHS状态
无铅/符合RoHS
交货时间
1-2天
可用数量
97024 Pieces
参考价
我们的价格
-（请以更优惠的价格与我们联系：[email protected]）
- ABC Semiconductor有IS43R86400D-6BLI的库存可出售。 我们可以在1-2天内寄给您。 请联系我们以获得IS43R86400D-6BLI的更优惠价格。 我们的电子邮件：[email protected]
- 运送方式和运送时间:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- 付款方式:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
规格 IS43R86400D-6BLI
质量保证 : 365天保修
库存资源 : 特许经销商/制造商直销
出生国家 : USA / TAIWAN / MEXICO / MALAYSIA / PHI
零件号 : IS43R86400D-6BLI
制造商 : ISSI, Integrated Silicon Solution Inc
描述 : IC DRAM 512M PARALLEL 60TFBGA
系列 : -
零件状态 : Active
内存类型 : Volatile
存储格式 : DRAM
技术 : SDRAM - DDR
内存大小 : 512Mb (64M x 8)
时钟频率 : 166MHz
写周期时间 - 字，页面 : 15ns
访问时间 : 700ps
内存接口 : Parallel
电压 - 电源 : 2.3V ~ 2.7V
工作温度 : -40°C ~ 85°C (TA)
安装类型 : Surface Mount
封装/箱体 : 60-TFBGA
供应商设备封装 : 60-TFBGA (8x13)
重量 : -
条件 : 新的和原始的
文件 IS43R86400D-6BLI
数据表 : IS43R86400D-6BLI.pdf
相关产品 IS43R86400D-6BLI ISSI, Integrated Silicon Solution Inc
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