NSB8JT-E3/81 - DIODE GEN PURP 600V 8A TO263AB

制造商零件编号

内部零件号

制造商

简要描述

DIODE GEN PURP 600V 8A TO263AB

RoHS状态

无铅/符合RoHS

交货时间

1-2天

可用数量

1002449 Pieces

参考价

~~USD 0.326525~~

我们的价格

-（请以更优惠的价格与我们联系：[email protected]）

ABC Semiconductor有NSB8JT-E3/81的库存可出售。我们可以在1-2天内寄给您。请联系我们以获得NSB8JT-E3/81的更优惠价格。我们的电子邮件：[email protected]

运送方式和运送时间:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

付款方式:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

质量保证 : 365天保修

库存资源 : 特许经销商/制造商直销

出生国家 : USA / TAIWAN / MEXICO / MALAYSIA / PHI

零件号 : NSB8JT-E3/81

制造商 : Vishay Semiconductor Diodes Division

描述 : DIODE GEN PURP 600V 8A TO263AB

系列 : -

零件状态 : Active

二极管类型 : Standard

电压 - （Vr）（最大） : 600V

电流 - 平均整流（Io） : 8A

电压 - 正向（Vf）（最大）@如果 : 1.1V @ 8A

速度 : Standard Recovery >500ns, > 200mA (Io)

反向恢复时间（trr） : -

电流 - Vr时反向漏电 : 10µA @ 600V

电容@ Vr，F时 : 55pF @ 4V, 1MHz

安装类型 : Surface Mount

封装/箱体 : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

供应商设备封装 : TO-263AB

工作温度 - 结 : -55°C ~ 150°C

重量 : -

条件 : 新的和原始的

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