DF11MR12W1M1B11BPSA1 - MOSFET MOD 1200V 50A

制造商零件编号

DF11MR12W1M1B11BPSA1

内部零件号

ABC-DF11MR12W1M1B11BPSA1

制造商

Infineon Technologies

简要描述

MOSFET MOD 1200V 50A

RoHS状态

无铅/符合RoHS

交货时间

1-2天

可用数量

35445 Pieces

参考价

~~USD 67.18~~

我们的价格

-（请以更优惠的价格与我们联系：[email protected]）

ABC Semiconductor有DF11MR12W1M1B11BPSA1的库存可出售。我们可以在1-2天内寄给您。请联系我们以获得DF11MR12W1M1B11BPSA1的更优惠价格。我们的电子邮件：[email protected]

运送方式和运送时间:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

付款方式:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

规格 DF11MR12W1M1B11BPSA1

质量保证 : 365天保修

库存资源 : 特许经销商/制造商直销

出生国家 : USA / TAIWAN / MEXICO / MALAYSIA / PHI

零件号 : DF11MR12W1M1B11BPSA1

制造商 : Infineon Technologies

描述 : MOSFET MOD 1200V 50A

系列 : CoolSiC™

零件状态 : Active

FET型 : 2 N-Channel (Dual)

FET特点 : Silicon Carbide (SiC)

漏极至源极电压（Vdss） : 1200V

电流 - 连续漏极（Id）@ 25℃ : 50A (Tj)

RDS（ON）（最大）标识，Vgs的 : 22.5 mOhm @ 50A, 15V

VGS（TH）（最大）标识 : 5.55V @ 20mA

栅极电荷（Qg）（最大）@ Vgs的 : 124nC @ 15V

输入电容（CISS）（最大）的Vds : 3680pF @ 800V

功率 - 最大 : 20mW

工作温度 : -40°C ~ 150°C (TJ)

安装类型 : Chassis Mount

封装/箱体 : Module

供应商设备封装 : AG-EASY1BM-2

重量 : -

条件 : 新的和原始的

文件 DF11MR12W1M1B11BPSA1

数据表 : DF11MR12W1M1B11BPSA1.pdf

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