A2T18S261W12NR3 - AIRFAST RF POWER LDMOS TRANSISTO

制造商零件编号

A2T18S261W12NR3

内部零件号

ABC-A2T18S261W12NR3

制造商

NXP USA Inc.

简要描述

AIRFAST RF POWER LDMOS TRANSISTO

RoHS状态

无铅/符合RoHS

交货时间

1-2天

可用数量

44192 Pieces

参考价

~~USD 33.83772~~

我们的价格

-（请以更优惠的价格与我们联系：[email protected]）

ABC Semiconductor有A2T18S261W12NR3的库存可出售。我们可以在1-2天内寄给您。请联系我们以获得A2T18S261W12NR3的更优惠价格。我们的电子邮件：[email protected]

运送方式和运送时间:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

付款方式:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

规格 A2T18S261W12NR3

质量保证 : 365天保修

库存资源 : 特许经销商/制造商直销

出生国家 : USA / TAIWAN / MEXICO / MALAYSIA / PHI

零件号 : A2T18S261W12NR3

制造商 : NXP USA Inc.

描述 : AIRFAST RF POWER LDMOS TRANSISTO

系列 : -

零件状态 : Active

晶体管类型 : LDMOS

频率 : 1.805GHz ~ 1.88GHz

获得 : 18.2dB

电压 - 测试 : 28V

目前评级 : 10µA

噪声系数 : -

电流 - 测试 : 1.5A

功率输出 : 280W

电压 - 额定 : 65V

封装/箱体 : OM-880X-2L2L

供应商设备封装 : OM-880X-2L2L

重量 : -

条件 : 新的和原始的

文件 A2T18S261W12NR3

数据表 : A2T18S261W12NR3.pdf

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