MT41K256M16V90BWC1 - IC DRAM 4G PARALLEL DIE

制造商零件编号

MT41K256M16V90BWC1

内部零件号

ABC-MT41K256M16V90BWC1

制造商

Micron Technology Inc.

简要描述

IC DRAM 4G PARALLEL DIE

RoHS状态

无铅/符合RoHS

交货时间

1-2天

可用数量

90016 Pieces

参考价

~~USD 0~~

我们的价格

-（请以更优惠的价格与我们联系：[email protected]）

ABC Semiconductor有MT41K256M16V90BWC1的库存可出售。我们可以在1-2天内寄给您。请联系我们以获得MT41K256M16V90BWC1的更优惠价格。我们的电子邮件：[email protected]

运送方式和运送时间:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

付款方式:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

规格 MT41K256M16V90BWC1

质量保证 : 365天保修

库存资源 : 特许经销商/制造商直销

出生国家 : USA / TAIWAN / MEXICO / MALAYSIA / PHI

零件号 : MT41K256M16V90BWC1

制造商 : Micron Technology Inc.

描述 : IC DRAM 4G PARALLEL DIE

系列 : -

零件状态 : Obsolete

内存类型 : Volatile

存储格式 : DRAM

技术 : SDRAM - DDR3L

内存大小 : 4Gb (256M x 16)

时钟频率 : -

写周期时间 - 字，页面 : -

访问时间 : -

内存接口 : Parallel

电压 - 电源 : 1.283V ~ 1.45V

工作温度 : 0°C ~ 95°C (TC)

安装类型 : -

封装/箱体 : -

供应商设备封装 : -

重量 : -

条件 : 新的和原始的

文件 MT41K256M16V90BWC1

数据表 : MT41K256M16V90BWC1.pdf

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