SIZ904DT-T1-GE3 - MOSFET 2N-CH 30V 12A POWERPAIR

制造商零件编号
内部零件号
制造商
简要描述
MOSFET 2N-CH 30V 12A POWERPAIR
RoHS状态
无铅/符合RoHS
交货时间
1-2天
可用数量
1180991 Pieces
参考价
USD 0.27716
我们的价格
-(请以更优惠的价格与我们联系:[email protected]

ABC Semiconductor有SIZ904DT-T1-GE3的库存可出售。 我们可以在1-2天内寄给您。 请联系我们以获得SIZ904DT-T1-GE3的更优惠价格。 我们的电子邮件:[email protected]
运送方式和运送时间:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
付款方式:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

规格 SIZ904DT-T1-GE3

质量保证 : 365天保修
库存资源 : 特许经销商/制造商直销
出生国家 : USA / TAIWAN / MEXICO / MALAYSIA / PHI
零件号 : SIZ904DT-T1-GE3
制造商 : Vishay Siliconix
描述 : MOSFET 2N-CH 30V 12A POWERPAIR
系列 : TrenchFET®
零件状态 : Active
FET型 : 2 N-Channel (Half Bridge)
FET特点 : Logic Level Gate
漏极至源极电压(Vdss) : 30V
电流 - 连续漏极(Id)@ 25℃ : 12A, 16A
RDS(ON)(最大)标识,Vgs的 : 24 mOhm @ 7.8A, 10V
VGS(TH)(最大)标识 : 2.5V @ 250µA
栅极电荷(Qg)(最大)@ Vgs的 : 12nC @ 10V
输入电容(CISS)(最大)的Vds : 435pF @ 15V
功率 - 最大 : 20W, 33W
工作温度 : -55°C ~ 150°C (TJ)
安装类型 : Surface Mount
封装/箱体 : 6-PowerPair™
供应商设备封装 : 6-PowerPair™
重量 : -
条件 : 新的和原始的
相关链接 : SIZ90 , SIZ904D

文件 SIZ904DT-T1-GE3

数据表 : SIZ904DT-T1-GE3.pdf

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