TK4A53D(STA4,Q,M) - MOSFET N-CH 525V 4A TO-220SIS

制造商零件编号

TK4A53D(STA4,Q,M)

内部零件号

ABC-TK4A53D(STA4,Q,M)

制造商

Toshiba Semiconductor and Storage

简要描述

MOSFET N-CH 525V 4A TO-220SIS

RoHS状态

无铅/符合RoHS

交货时间

1-2天

可用数量

51008 Pieces

参考价

~~USD 0~~

我们的价格

-（请以更优惠的价格与我们联系：[email protected]）

ABC Semiconductor有TK4A53D(STA4,Q,M)的库存可出售。我们可以在1-2天内寄给您。请联系我们以获得TK4A53D(STA4,Q,M)的更优惠价格。我们的电子邮件：[email protected]

运送方式和运送时间:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

付款方式:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

规格 TK4A53D(STA4,Q,M)

质量保证 : 365天保修

库存资源 : 特许经销商/制造商直销

出生国家 : USA / TAIWAN / MEXICO / MALAYSIA / PHI

零件号 : TK4A53D(STA4,Q,M)

制造商 : Toshiba Semiconductor and Storage

描述 : MOSFET N-CH 525V 4A TO-220SIS

系列 : π-MOSVII

零件状态 : Active

FET型 : N-Channel

技术 : MOSFET (Metal Oxide)

漏极至源极电压（Vdss） : 525V

电流 - 连续漏极（Id）@ 25℃ : 4A (Ta)

驱动电压（最大RDS（ON），闵RDS（ON）） : 10V

RDS（ON）（最大）标识，Vgs的 : 1.7 Ohm @ 2A, 10V

VGS（TH）（最大）标识 : 4.4V @ 1mA

栅极电荷（Qg）（最大）@ Vgs的 : 11nC @ 10V

VGS（最大） : ±30V

输入电容（CISS）（最大）的Vds : 490pF @ 25V

FET特点 : -

功率耗散（最大） : 35W (Tc)

工作温度 : 150°C (TJ)

安装类型 : Through Hole

供应商设备封装 : TO-220SIS

封装/箱体 : TO-220-3 Full Pack

重量 : -

条件 : 新的和原始的

文件 TK4A53D(STA4,Q,M)

数据表 : TK4A53D(STA4,Q,M).pdf

相关产品 TK4A53D(STA4,Q,M) Toshiba Semiconductor and Storage

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