APTM120H140FT1G - MOSFET 4N-CH 1200V 8A SP1

制造商零件编号

APTM120H140FT1G

内部零件号

ABC-APTM120H140FT1G

制造商

Microsemi Corporation

简要描述

MOSFET 4N-CH 1200V 8A SP1

RoHS状态

无铅/符合RoHS

交货时间

1-2天

可用数量

71904 Pieces

参考价

~~USD 20.7927~~

我们的价格

-（请以更优惠的价格与我们联系：[email protected]）

ABC Semiconductor有APTM120H140FT1G的库存可出售。我们可以在1-2天内寄给您。请联系我们以获得APTM120H140FT1G的更优惠价格。我们的电子邮件：[email protected]

运送方式和运送时间:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

付款方式:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

规格 APTM120H140FT1G

质量保证 : 365天保修

库存资源 : 特许经销商/制造商直销

出生国家 : USA / TAIWAN / MEXICO / MALAYSIA / PHI

零件号 : APTM120H140FT1G

制造商 : Microsemi Corporation

描述 : MOSFET 4N-CH 1200V 8A SP1

系列 : -

零件状态 : Active

FET型 : 4 N-Channel (H-Bridge)

FET特点 : Standard

漏极至源极电压（Vdss） : 1200V (1.2kV)

电流 - 连续漏极（Id）@ 25℃ : 8A

RDS（ON）（最大）标识，Vgs的 : 1.68 Ohm @ 7A, 10V

VGS（TH）（最大）标识 : 5V @ 1mA

栅极电荷（Qg）（最大）@ Vgs的 : 145nC @ 10V

输入电容（CISS）（最大）的Vds : 3812pF @ 25V

功率 - 最大 : 208W

工作温度 : -40°C ~ 150°C (TJ)

安装类型 : Chassis Mount

封装/箱体 : SP1

供应商设备封装 : SP1

重量 : -

条件 : 新的和原始的

文件 APTM120H140FT1G

数据表 : APTM120H140FT1G.pdf

相关产品 APTM120H140FT1G Microsemi Corporation

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