SI4963BDY-T1-GE3 - MOSFET 2P-CH 20V 4.9A 8SOIC

制造商零件编号

SI4963BDY-T1-GE3

内部零件号

ABC-SI4963BDY-T1-GE3

制造商

Vishay Siliconix

简要描述

MOSFET 2P-CH 20V 4.9A 8SOIC

RoHS状态

无铅/符合RoHS

交货时间

1-2天

可用数量

750953 Pieces

参考价

~~USD 0.435875~~

我们的价格

-（请以更优惠的价格与我们联系：[email protected]）

ABC Semiconductor有SI4963BDY-T1-GE3的库存可出售。我们可以在1-2天内寄给您。请联系我们以获得SI4963BDY-T1-GE3的更优惠价格。我们的电子邮件：[email protected]

运送方式和运送时间:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

付款方式:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

规格 SI4963BDY-T1-GE3

质量保证 : 365天保修

库存资源 : 特许经销商/制造商直销

出生国家 : USA / TAIWAN / MEXICO / MALAYSIA / PHI

零件号 : SI4963BDY-T1-GE3

制造商 : Vishay Siliconix

描述 : MOSFET 2P-CH 20V 4.9A 8SOIC

系列 : -

零件状态 : Active

FET型 : 2 P-Channel (Dual)

FET特点 : Logic Level Gate

漏极至源极电压（Vdss） : 20V

电流 - 连续漏极（Id）@ 25℃ : 4.9A

RDS（ON）（最大）标识，Vgs的 : 32 mOhm @ 6.5A, 4.5V

VGS（TH）（最大）标识 : 1.4V @ 250µA

栅极电荷（Qg）（最大）@ Vgs的 : 21nC @ 4.5V

输入电容（CISS）（最大）的Vds : -

功率 - 最大 : 1.1W

工作温度 : -55°C ~ 150°C (TJ)

安装类型 : Surface Mount

封装/箱体 : 8-SOIC (0.154", 3.90mm Width)

供应商设备封装 : 8-SO

重量 : -

条件 : 新的和原始的

文件 SI4963BDY-T1-GE3

数据表 : SI4963BDY-T1-GE3.pdf

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