NVMFD5C650NLT1G - MOSFET 2N-CH 60V 111A S08FL

制造商零件编号

NVMFD5C650NLT1G

内部零件号

ABC-NVMFD5C650NLT1G

制造商

ON Semiconductor

简要描述

MOSFET 2N-CH 60V 111A S08FL

RoHS状态

无铅/符合RoHS

交货时间

1-2天

可用数量

576450 Pieces

参考价

~~USD 0.56782~~

我们的价格

-（请以更优惠的价格与我们联系：[email protected]）

ABC Semiconductor有NVMFD5C650NLT1G的库存可出售。我们可以在1-2天内寄给您。请联系我们以获得NVMFD5C650NLT1G的更优惠价格。我们的电子邮件：[email protected]

运送方式和运送时间:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

付款方式:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

规格 NVMFD5C650NLT1G

质量保证 : 365天保修

库存资源 : 特许经销商/制造商直销

出生国家 : USA / TAIWAN / MEXICO / MALAYSIA / PHI

零件号 : NVMFD5C650NLT1G

制造商 : ON Semiconductor

描述 : MOSFET 2N-CH 60V 111A S08FL

系列 : Automotive, AEC-Q101

零件状态 : Active

FET型 : 2 N-Channel (Dual)

FET特点 : Standard

漏极至源极电压（Vdss） : 60V

电流 - 连续漏极（Id）@ 25℃ : 21A (Ta), 111A (Tc)

RDS（ON）（最大）标识，Vgs的 : 4.2 mOhm @ 20A, 10V

VGS（TH）（最大）标识 : 2.2V @ 98µA

栅极电荷（Qg）（最大）@ Vgs的 : 16nC @ 4.5V

输入电容（CISS）（最大）的Vds : 2546pF @ 25V

功率 - 最大 : 3.5W (Ta), 125W (Tc)

工作温度 : -55°C ~ 175°C (TJ)

安装类型 : Surface Mount

封装/箱体 : 8-PowerTDFN

供应商设备封装 : 8-DFN (5x6) Dual Flag (SO8FL-Dual)

重量 : -

条件 : 新的和原始的

文件 NVMFD5C650NLT1G

数据表 : NVMFD5C650NLT1G.pdf

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